PANEL DISCUSSION

Dr. Momoko Deura

Assistant Professor
Department of Materials Engineering

The University of Tokyo

Dr. Momoko Deura received the Bachelor and Master of Engineering in electronic engineering, and Doctor of Engineering, Ph.D. in electrical engineering and information systems from the University of Tokyo in 2006, 2008, and 2011, respectively. She worked in Tokyo University of Science from 2011 to 2013, Tohoku University from 2013 to 2017, and has been working in Department of Materials Engineering, School of Engineering, the University of Tokyo as an assistant professor since 2017. She has studied mainly epitaxial growth of compound semiconductors including InGaAsP systems and III-nitride semiconductors. Now she has been studying the heteroepitaxial growth of high-quality GaN crystals on Si substrates with a SiC buffer layer formed using Si surface carbonization.