Cristine Jin Delos Santos
The Hong Kong University of Science and Technology
Cristine recently graduated from the Hong Kong University of Science and Technology (HKUST) with a doctorate degree on Electronic and Computer Engineering (PhD ECE). She is a key member of the emerging device and systems (EDS) group where her research involves twodimensional (2D) materials-based devices and circuits, complementary metal-oxide semiconductor (CMOS) circuits and sensors, nano-devices fabrication and processing, and device modeling. She also finished her master’s degree in ECE at HKUST where she developed the first compact model for a widely popular 3-D time-of-flight (ToF) CMOS image sensor called current-assisted photonic demodulator (CAPD). Currently, she is a faculty member of the Electronics Engineering Department at the University of Santo Tomas, which is one of the top universities in the Philippines.
Homogenous Integration of Two-Dimensional (2-D) Transistors for CMOS Circuit Applications
To demonstrate the potential of two-dimensional (2-D) field-effect transistors (FETs) as an emerging technology for modern electronic applications such as wearable displays and flexible electronics, it is necessary to form n- and p- channel devices based on the same 2-D semiconducting active film. These devices based on 2-D technology should have desirable threshold voltage (VT) polarity and symmetric current drive when realizing complementary metal-oxide-semiconductor (CMOS) circuits. To this end, design considerations are first identified to ensure that the target performance parameters on the device level such as positive VT for n-FET and negative VT for p-FET are achieved, along with high on-off current ratio, and current drive. Consequently, two general classes of devices are fabricated – one formed conventionally where only the channel is made of 2-D material, and another wherein the entire channel stack is formed using all 2-D materials. Finally, the n- and pchannel devices are integrated monolithically to demonstrate CMOS circuit inverters with rail-to-rail performance, high gain, and wide noise margin.
